Manijeh Razeghi, Walter P. Murphy Professor has been named Conference Chair of the Workshop on Defects in Wide Band Gap Semiconductors (WBG), which will be held on Monday, September 23, 2014 at the University of Maryland in College Park, MD.

Wide Band Gap (WBG) semiconductors including Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential for transformative impact on the 21st century energy economy. However, a high density of crystal defects in WBG materials is significantly hindering the progress in realizing many of the beneficial attributes of WBG-based power electronics systems. For example, there is an overwhelming evidence to suggest that manufacturing yield and cost are critically controlled by material defects. Recent results also suggest that the long-term reliability of WBG-based power electronics systems may be seriously compromised although definitive conclusions cannot be reached. The main objective of this one-day workshop is to bring together nation's leading experts in the WBG supply chain to identify fundamental research needs in WBG materials for advancing power electronics switching applications.

To submit an abstract by the July 28 deadline, follow the instructions and submission template at

Topics that will be addressed include:

Gallium Nitride and Silicon Carbide and Related Compounds   

  • Origin of Defects in wide band-gap semiconductors    
  • Extended Defects in wide band-gap semiconductors    
  • Defect reduction strategies    
  • Atomic level control of material growth    
  • Growth Optimization and Growth Yield    
  • Defect dynamics in extreme environments 


Wide Bandgap Power Devices

  • Defect-device performance-reliability correlations    
  • Defect-manufacturing yield correlations    
  • The role of defects in wide bandgap power electronics    
  • Defect modeling and defect-device performance models    
  • Defect characterization, in-situ and in real time    
  • Advanced defect characterization in both ground and excited states    
  • Defect modeling in the ground and excited states    
  • Manufacturing yield and cost reduction strategies